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mrf7s15100hr3 mrf7s15100hsr3 1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for cdma base station applications with frequencies from 1470 to 1510 mhz. can be used in class ab an d class c for all typical cellular base station modulations. ? typical single - carrier w - cdma performance: v dd = 28 volts, i dq = 600 ma, p out = 23 watts avg., f = 1507.5 mhz, iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. power gain ? 19.5 db drain efficiency ? 32% device output signal par ? 6.2 db @ 0.01% probability on ccdf acpr @ 5 mhz offset ? - 38 dbc in 3.84 mhz channel bandwidth ? capable of handling 10:1 vswr, @ 32 vdc, 1490 mhz, 100 watts cw output power ? typical p out @ 1 db compression point 100 watts cw features ? 100% par tested for guaranteed output power capability ? characterized with series equivalent large - signal impedance parameters ? internally matched for ease of use ? integrated esd protection ? greater negative gate - source voltage range for improved class c operation ? optimized for doherty applications ? rohs compliant ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +65 vdc gate - source voltage v gs - 6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c cw operation @ t a = 25 c derate above 25 c cw 75 0.36 w w/ c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 80 c, 55 w cw case temperature 77 c, 23 w cw r jc 0.65 0.74 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: mrf7s15100h rev. 2, 6/2009 freescale semiconductor technical data 1470 - 1510 mhz, 23 w avg., 28 v single w - cdma lateral n - channel rf power mosfets mrf7s15100hr3 mrf7s15100hsr3 case 465 - 06, style 1 ni - 780 mrf7s1500hr3 case 465a - 06, style 1 ni - 780s mrf7s1500hsr3 ? freescale semiconductor, inc., 2008 - 2009. all rights reserved.
2 rf device data freescale semiconductor mrf7s15100hr3 mrf7s15100hsr3 table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 1c (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iv (minimum) table 4. electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v dd = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 174 adc) v gs(th) 1.2 2 2.7 vdc gate quiescent voltage (v dd = 28 vdc, i d = 600 madc, measured in functional test) v gs(q) 2 2.7 3.5 vdc drain - source on - voltage (v gs = 10 vdc, i d = 1.74 adc) v ds(on) 0.1 0.2 0.3 vdc dynamic characteristics (1) reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 0.6 ? pf output capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 300 ? pf input capacitance (v ds = 28 vdc, v gs = 0 vdc 30 mv(rms)ac @ 1 mhz) c iss ? 176 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 600 ma, p out = 23 w avg., f = 1507.5 mhz, single - carrier w - cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. power gain g ps 18 19.5 21 db drain efficiency d 30 32 ? % output peak - to - average ratio @ 0.01% probability on ccdf par 5.9 6.2 ? db adjacent channel power ratio acpr ? -38 -35 dbc input return loss irl ? -15 -8 db 1. part internally matched both on input and output. (continued)
mrf7s15100hr3 mrf7s15100hsr3 3 rf device data freescale semiconductor table 4. electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performances (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 600 ma, 1470 - 1510 mhz bandwidth p out @ 1 db compression point, cw p1db ? 100 ? w imd symmetry @ 90 w pep, p out where imd third order intermodulation 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 40 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 70 ? mhz gain flatness in 40 mhz bandwidth @ p out = 23 w avg. g f ? 0.2 ? db average deviation from linear phase in 40 mhz bandwidth @ p out = 100 w cw ? 4.5 ? average group delay @ p out = 100 w cw, f = 1490 mhz delay ? 1.9 ? ns part - to - part insertion phase variation @ p out = 100 w cw, f = 1490 mhz, six sigma window ? ? 23 ? gain variation over temperature (-30 c to +85 c) g ? 0.010 ? db/ c output power variation over temperature (-30 c to +85 c) p1db ? 0.007 ? w/ c
4 rf device data freescale semiconductor mrf7s15100hr3 mrf7s15100hsr3 figure 1. mrf7s15100hr3(hsr3) test circuit schematic z15 1.330 x 0.538 microstrip z16 0.270 x 0.280 microstrip z17 0.187 x 0.150 microstrip z18 0.084 x 0.042 microstrip z19 0.184 x 0.292 microstrip z20 0.084 x 0.066 microstrip z21 0.886 x 0.194 microstrip z22 0.300 x 0.084 microstrip z23 0.084 x 0.215 microstrip z24 0.221 x 0.075 microstrip z25 0.084 x 0.175 microstrip z26, z27 0.200 x 0.525 microstrip z28, z29 0.235 x 0.102 microstrip pcb arlon cuclad 250gx - 0300 - 55 - 22, 0.030 , r = 2.55 z1 0.084 x 0.078 microstrip z2 0.149 x 0.153 microstrip z3 0.149 x 0.303 microstrip z4 0.149 x 0.065 microstrip z5 0.084 x 0.146 microstrip z6 0.084 x 0.104 microstrip z7 0.218 x 0.080 microstrip z8 0.084 x 0.206 microstrip z9 0.224 x 0.085 microstrip z10 0.084 x 0.369 microstrip z11 1.288 x 0.206 microstrip z12 1.288 x 0.144 microstrip z13 1.288 x 0.369 microstrip z14 1.330 x 0.112 microstrip z1 rf input z2 z8 dut v bias v supply c8 c10 + z9 z6 z3 z4 b1 c4 c5 + r3 r2 l3 c2 l2 c1 c3 z5 z7 z10 z11 z12 z13 r1 l1 c6 rf output z23 z20 z19 z18 z17 z16 z15 z14 z26 z22 z21 z27 z28 z29 z24 z25 c11 c9 v supply c7 c12 c13 table 5. mrf7s15100hr3(hsr3) test circuit component designations and values part description part number manufacturer b1 short ferrite bead 2743019447 fair - rite c1, c6, c7, c8 15 pf chip capacitors atc100b150jt500xt atc c2 0.5 pf chip capacitor atc100b0r5bt500xt atc c3 10 pf chip capacitor atc100b100jt500xt atc c4, c9, c13 6.8 f, 50 v chip capacitors c4532jb1h685mt tdk c5, c10 100 f, 50 v electrolytic capacitors 222215371101 vishay c11, c12 2.2 f, 50 v chip capacitors c3225jb2a225mt tdk l1, l2, l3 7.15 nh inductors 1606 - tlc coilcraft r1, r2 100 , 1/4 w chip resistors crcw12061000fkea vishay r3 10 k , 1/4 w chip resistor crcw12061002fkea vishay
mrf7s15100hr3 mrf7s15100hsr3 5 rf device data freescale semiconductor figure 2. mrf7s15100hr3(hsr3) test circuit component layout cut out area r3 mrf7s15100h/hs rev. 3 b1 r2 c4 c3 r1 l1 c2 c1 l3 l2 c8 c11 c9 c10 c6 c13 c12 c7 c5
6 rf device data freescale semiconductor mrf7s15100hr3 mrf7s15100hsr3 typical characteristics irl, input return loss (db) 1400 f, frequency (mhz) figure 3. output peak - to - average ratio compression (parc) broadband performance @ p out = 23 watts avg. ?25 ?5 ?10 ?15 ?20 19 18 17 ?41 35 34 33 32 ?36 ?37 ?38 ?39 d , drain efficiency (%) g ps , power gain (db) 16 15 14 13 12 11 10 1425 1450 1475 1500 1525 1550 1575 1600 31 ?40 ?30 parc (db) ?1.1 ?0.7 ?0.8 ?0.9 ?1 ?1.2 acpr (dbc) figure 4. cw power gain versus output power 100 20 1 p out , output power (watts) cw v dd = 28 vdc, f = 1490 mhz cw measurements 17 16 10 200 g ps , power gain (db) 18 i dq = 900 ma 750 ma figure 5. intermodulation distortion products versus tone spacing two?tone spacing (mhz) 10 ?70 ?10 ?20 ?30 ?50 1 100 imd, intermodulation distortion (dbc) ?40 im3?u im3?l im5?u im5?l im7?l im7?u figure 6. output peak - to - average ratio compression (parc) versus output power 1 p out , output power (watts) ?1 ?3 ?5 25 0 ?2 ?4 output compression at 0.01% probability on ccdf (db) 15 35 45 65 25 55 50 45 40 35 30 d , drain efficiency (%) ?1 db = 24.14 w ?2 db = 32.65 w ?3 db = 43.29 w 55 d acpr parc acpr (dbc) ?45 ?15 ?20 ?25 ?35 ?30 ?40 21 g ps , power gain (db) 20 19 18 17 16 15 g ps 20 irl g ps acpr d parc v dd = 28 vdc, p out = 23 w (avg.) i dq = 600 ma, single?carrier w?cdma 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0.01% probability on ccdf ?60 v dd = 28 vdc, p out = 90 w (pep), i dq = 600 ma two?tone measurements (f1 + f2)/2 = center frequency of 1490 mhz v dd = 28 vdc, i dq = 600 ma, f = 1490 mhz, single?carrier w?cdma, 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0.01% probability on ccdf 19 600 ma 450 ma 300 ma
mrf7s15100hr3 mrf7s15100hsr3 7 rf device data freescale semiconductor typical characteristics 1 p out , output power (watts) avg. figure 7. single - carrier w - cdma power gain, drain efficiency and acpr versus output power ?25 ?32 10 22 0 90 75 60 45 30 d , drain efficiency (%) g ps , power gain (db) 20 18 10 100 200 15 ?60 acpr (dbc) 16 14 12 ?18 ?39 ?46 ?53 figure 8. broadband frequency response 0 25 1150 f, frequency (mhz) v dd = 28 vdc i dq = 600 ma 15 10 1250 s21 (db) 20 s21 1350 1450 1550 1650 1750 1850 2250 s11 ?25 0 ?5 ?10 ?15 ?20 s11 (db) 5 t c = ?30 c g ps d v dd = 28 vdc, i dq = 600 ma, f = 1490 mhz single?carrier w?cdma, 3.84 mhz channel bandwidth input signal par = 7.5 db @ 0.01% probability on ccdf ?30 c acpr 25 c 85 c 85 c 25 c 85 c 25 c 1950 2050 2150 250 10 9 90 t j , junction temperature ( c) figure 9. mttf versus junction temperature this above graph displays calculated mttf in hours when the device is operated at v dd = 28 vdc, p out = 23 w avg., and d = 32%. mttf calculator available at http://www.freescale.com/rf. select software & tools/development tools/calculators to access mttf calculators by product. 10 8 10 7 10 5 110 130 150 170 190 mttf (hours) 210 230 10 6
8 rf device data freescale semiconductor mrf7s15100hr3 mrf7s15100hsr3 w - cdma test signal 0.0001 100 0 peak?to?average (db) figure 10. ccdf w - cdma iq magnitude clipping, single - carrier test signal 10 1 0.1 0.01 0.001 24 6 8 probability (%) w?cdma. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. input signal par = 7.5 db @ 0.01% probability on ccdf input signal 10 ?60 ?100 10 (db) ?20 ?30 ?40 ?50 ?70 ?80 ?90 3.84 mhz channel bw 7.2 1.8 5.4 3.6 0 ?1.8 ?3.6 ?5.4 ?9 9 f, frequency (mhz) figure 11. single - carrier w - cdma spectrum ?7.2 ?acpr in 3.84 mhz integrated bw +acpr in 3.84 mhz integrated bw ?10 0 13579
mrf7s15100hr3 mrf7s15100hsr3 9 rf device data freescale semiconductor z o = 10 z load z source f = 1570 mhz f = 1410 mhz f = 1410 mhz f = 1570 mhz v dd = 28 vdc, i dq = 600 ma, p out = 23 w avg. f mhz z source z load 1410 2.51 - j5.82 4.12 - j4.20 1430 2.53 - j5.58 3.95 - j4.07 1450 2.55 - j5.36 3.78 - j3.94 1470 2.58 - j5.15 3.61 - j3.80 1490 2.62 - j4.97 3.45 - j3.65 1510 2.67 - j4.81 3.30 - j3.51 1530 2.73 - j4.68 3.15 - j3.37 1550 2.79 - j4.57 3.00 - j3.22 1570 2.85 - j4.49 2.87 - j3.06 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 12. series equivalent source and load impedance z source z load input matching network device under test output matching network
10 rf device data freescale semiconductor mrf7s15100hr3 mrf7s15100hsr3 alternative peak tune load pull characteristics 36 p3db = 51.63 dbm (146 w) p in , input power (dbm) v dd = 28 vdc, i dq = 600 ma, pulsed cw 10 sec(on), 10% duty cycle, f = 1500 mhz 51 49 47 37 actual ideal 52 50 46 p out , output power (dbm) note: load pull test fixture tuned for peak p1db output power @ 28 v 48 53 54 55 56 35 34 33 27 32 31 30 29 28 p1db = 50.95 dbm (125 w) test impedances per compression level z source z load p1db 2.02 + j6.21 2.00 - j3.65 figure 13. pulsed cw output power versus input power @ 28 v
mrf7s15100hr3 mrf7s15100hsr3 11 rf device data freescale semiconductor package dimensions case 465 - 06 issue g notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. deleted 4. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 1.335 1.345 33.91 34.16 b 0.380 0.390 9.65 9.91 c 0.125 0.170 3.18 4.32 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 g 1.100 bsc 27.94 bsc h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 n 0.772 0.788 19.60 20.00 q .118 .138 3.00 3.51 r 0.365 0.375 9.27 9.53 style 1: pin 1. drain 2. gate 3. source 1 3 2 d g k c e h s f s 0.365 0.375 9.27 9.52 m 0.774 0.786 19.66 19.96 aaa 0.005 ref 0.127 ref bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref q 2x m a m bbb b m t m a m bbb b m t b b (flange) seating plane m a m ccc b m t m a m bbb b m t aa (flange) t n (lid) m (insulator) m a m aaa b m t (insulator) r m a m ccc b m t (lid) ni - 780 mrf7s15100hr3 case 465a - 06 issue h notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. deleted 4. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 0.805 0.815 20.45 20.70 b 0.380 0.390 9.65 9.91 c 0.125 0.170 3.18 4.32 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 m 0.774 0.786 19.61 20.02 r 0.365 0.375 9.27 9.53 style 1: pin 1. drain 2. gate 5. source 1 2 d k c e h f 3 u (flange) 4x z (lid) 4x bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref aaa 0.005 ref 0.127 ref s 0.365 0.375 9.27 9.52 n 0.772 0.788 19.61 20.02 u ??? 0.040 ??? 1.02 z ??? 0.030 ??? 0.76 m a m bbb b m t b b (flange) 2x seating plane m a m ccc b m t m a m bbb b m t a a (flange) t n (lid) m (insulator) m a m ccc b m t m a m aaa b m t r (lid) s (insulator) ni - 780s mrf7s15100hsr3
12 rf device data freescale semiconductor mrf7s15100hr3 mrf7s15100hsr3 product documentation, tools and software refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model for software and tools, do a part number search at http://www.freescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 july 2008 ? initial release of data sheet 1 feb. 2009 ? added fig. 9, mttf versus junction temperature, p. 7 2 june 2009 ? added maximum cw limit and temperature derating factor to the maximum ratings table, p. 1 ? fig. 10, ccdf w - cdma iq magnitude clipping, single - carrier test signal and fig. 11, single - carrier w - cdma spectrum updated to show the undistorted input test signal, p. 8 ? added electromigration mttf calculator and rf high power model availability to product documentation, tools and software, p. 12
mrf7s15100hr3 mrf7s15100hsr3 13 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2008 - 2009. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140 fax: +1 - 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf7s15100h rev. 2, 6/2009

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